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1. product profile 1.1 general description npn high-voltage low v cesat breakthrough in small signal (biss) transistor in a medium power sot223 (sc-73) surface-mounted device (smd) plastic package. pnp complement: pbhv9540z. 1.2 features ? high voltage ? low collector-emitter sa turation voltage v cesat ? high collector curr ent capability i c and i cm ? high collector cu rrent gain (h fe ) at high i c ? aec-q101 qualified ? medium power smd plastic package 1.3 applications ? led driver for led chain module ? lcd backlighting ? automotive motor management ? switch mode power supply (smps) 1.4 quick reference data [1] pulse test: t p 300 s; ? 0.02. PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor rev. 01 ? 11 december 2009 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v cesm collector-emitter peak voltage v be = 0 v - - 500 v v ceo collector-emitter voltage open base - - 400 v i c collector current - - 1 a h fe dc current gain v ce =10v; i c =50ma [1] 100 155 -
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 2 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking table 2. pinning pin description simplified outline graphic symbol 1base 2 collector 3emitter 4 collector 13 2 4 sym016 2, 4 3 1 table 3. ordering information type number package name description version PBHV8140Z sc-73 plastic surface-mounted package with increased heatsink; 4 leads sot223 table 4. marking codes type number marking code PBHV8140Z v8140z
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 3 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 printed-circuit board ( pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 . table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 500 v v ceo collector-emitter voltage open base - 400 v v cesm collector-emitter peak voltage v be =0v - 500 v v ebo emitter-base voltage open collector - 6 v i c collector current - 1 a i cm peak collector current single pulse; t p 1ms -2a i bm peak base current single pulse; t p 1ms -400ma p tot total power dissipation t amb 25 c [1] -0.73w [2] -1.45w t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c (1) fr4 pcb, mounting pad for collector 6 cm 2 (2) fr4 pcb, standard footprint fig 1. power derating curves t amb ( c) ? 75 175 125 25 75 ? 25 006aab764 1.0 0.5 1.5 2.0 p tot (w) 0.0 (2) (1)
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 4 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 170 k/w [2] --85k/w r th(j-sp) thermal resistance from junction to solder point --15k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values fr4 pcb, mounting pad for collector 6 cm 2 fig 3. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values 006aab765 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aab766 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 5 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 s; ? 0.02. table 7. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =320v; i e = 0 a - - 100 na v cb =320v; i e =0a; t j = 150 c --10 a i ces collector-emitter cut-off current v ce =320v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =4v; i c = 0 a - - 100 na h fe dc current gain v ce =10v i c = 50 ma 100 155 - i c = 100 ma [1] 80 150 - i c = 500 ma [1] 35 65 - i c =1a [1] 10 20 - v cesat collector-emitter saturation voltage i c = 100 ma; i b =10ma [1] - 4580mv i c = 100 ma; i b =20ma [1] - 3050mv i c = 500 ma; i b = 100 ma [1] - 85 140 mv i c =1a; i b =200ma [1] - 150 250 mv r cesat collector-emitter saturation resistance i c =1a; i b =200ma [1] - 150 250 m v besat base-emitter saturation voltage i c =1a; i b =200ma [1] - 0.95 1.1 v t d delay time v cc =6v; i c =0.5a; i bon = 0.1 a; i boff = ? 0.1 a -25-ns t r rise time - 2820 - ns t on turn-on time - 2845 - ns t s storage time - 2585 - ns t f fall time - 1215 - ns t off turn-off time - 3800 - ns f t transition frequency v ce =10v; i c =10ma; f = 100 mhz -25-mhz c c collector capacitance v cb =20v; i e =i e =0a; f=1mhz -12-pf c e emitter capacitance v eb =0.5v; i c =i c =0a; f=1mhz - 600 - pf
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 6 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor v ce =10v (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c fig 4. dc current gain as a function of collector current; typical values fig 5. collector current as a function of collector-emitter voltage; typical values v ce =10v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =5 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c fig 6. base-emitter voltage as a function of collector current; typical values fig 7. base-emitter saturation voltage as a function of collector current; typical values 006aab903 100 200 300 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3) v ce (v) 05 4 23 1 006aab904 0.8 1.2 0.4 1.6 2.0 i c (a) 0 i b (ma) = 360 324 288 252 216 180 36 72 144 108 006aab905 0.4 0.8 1.2 v be (v) 0.0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3) 006aab906 0.6 0.8 0.4 1.0 1.2 v besat (v) 0.2 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3)
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 7 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 8. collector-emitter saturation voltage as a function of collector current; typical values fig 9. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 10. collector-emitter saturation resistance as a function of collector current; typical values fig 11. collector-emitter saturation resistance as a function of collector current; typical values 006aab907 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (2) (1) (3) 006aab908 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (2) (1) (3) 006aab909 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (2) (1) (3) i c (ma) 10 ? 1 10 4 10 3 110 2 10 006aab910 10 1 10 3 10 2 10 4 r cesat ( ) 10 ? 1 (2) (1) (3)
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 8 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . fig 12. test circuit for switching times r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc fig 13. package outline sot223 (sc-73) 04-11-10 dimensions in mm 6.7 6.3 3.1 2.9 1.8 1.5 7.3 6.7 3.7 3.3 1.1 0.7 13 2 4 4.6 2.3 0.8 0.6 0.32 0.22 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 PBHV8140Z sot223 8 mm pitch, 12 mm tape and reel -115 -135
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 9 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 11. soldering fig 14. reflow soldering footprint sot223 (sc-73) fig 15. wave soldering footprint sot223 (sc-73) sot223_ fr 1.2 (4 ) 1.2 (3 ) 1.3 (4 ) 1.3 (3 ) 6.15 7 3.85 3.6 3.5 0.3 3.9 7.65 2.3 2.3 6.1 4 23 1 solder lands solder resist occupied area solder paste dimensions in mm sot223_ fw 1.9 6.7 8.9 8.7 1.9 (3 ) 1.9 (2 ) 1.1 6.2 2.7 2.7 2 4 3 1 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 10 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBHV8140Z_1 20091211 product data sheet - -
PBHV8140Z_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 11 december 2009 11 of 12 nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors PBHV8140Z 500 v, 1 a npn high-voltage low v cesat (biss) transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 december 2009 document identifier: PBHV8140Z_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information . . . . . . . . . . . . . . . . . . . . . 8 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information. . . . . . . . . . . . . . . . . . . . . 11 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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